Processing of formation of ultrathin metal oxide films

A n n o t a t i o n The following thesis discusses formation ultrathin films of transition metal Zirconium and a metal with high-melting point Wolfram oxides, on semiconductor silicon and aluminium(III) oxide bases, with magnetron scattering method and afterwards their use in memristor active layer. Technological route was developed to obtain them. In a process, was achieved two layered oxide structures, by their magnetron scattering in Oxygen and Argon atmosphere at various partial pressures. To study the electrical and structural properties of individual oxide films, each oxide layer was obtained separately in the same technological mode. The study addresses various key tasks such as obtaining double and single layers under different technological conditions of magnetron scattering, recording the X-ray spectra required for structural analysis, measuring voltage-capacitance (C-V) and a memristor voltage-current (I-V) characteristics. The results of the relevant measurements were summarized and conclusions were made, that obtained oxide films fully meet the requirements set before them.