Creating semiconductor nanoheterostructures using molecular beam epitaxy and studying its electrophysical properties

In the last decades semiconductor devices have wide variety of applications in different areas such as: Hgh Energy Physics, Cosmology, Environmental Monitoring, Medicine, et cetera. Mostly in this kind of devices active elements are diods and transistors made of heterostructural semiconductors with two dimensional electron gas (2DEG). One of the modern methods of creating heterostructures is Molecular Beam Epitaxy (MBE). This is Ultra High Vacuum growing method of with high purity materials. The following work is about engineering two dimensional electron gas with GaAs/AlGaAs/InGaAs heterostructures using Molecular Beam Epitacy. During the experiment technological parameters of layer growth was worked out: ultra high vacuum, speed of growth and temperature of the substrate. Electrophysical characteristics of the structures was calculated: charge carrier mobility, charge carrier concentration, resistivity. For determining electrophysical characteristics of the structures was used van-der-pauw method and non-contact sheet resistance measurement.