Study of diffusion processes in solids

The Diploma presents the low-temperature technology for making the main element of the microcircuit based on semiconductor silicon - p-n transitions, defining their basic electro-physical and optical parameters. The traditional technology for making them is high temperature (~1100C), which causes side, uncontrollable events that worsen the device and therefore, the microcircuit parameters. The Diploma develops a technological route for making p-n transitions, a simple method of depositing diffusers, develops and uses low-temperature original pulsed photon diffusion technological processes, studies the parameters of the obtained structures such as diffusion layer depth, surface depth, etc. The results were summarized from the relevant measurements and general conclusions were made, which determined that the received diodes fully meet the requirements set before it.