processing the technology of formation for ultrathin dielectric films

In the following thesis we are discussing the technological process of obtaining and researching the oxides of transition metals of hafnium, zirconium and yttrium. For oxides formation technological processes with low-temperature magnetronic dispersion has been developed, which progress on modernized vacuum machine. This machine gives us an opportunity to seperately lay two different oxides of transition metals without breaking the vacuum. To measure some parameters of oxides, they are layered with already decided order on silicon and sapphire substrates. For oxides formation technological route has been developed and also optimal processes have been established. Electro-physical, dielectrical and optical processes have been developed. Because of this, a technological route for the supercapacitor structures were established as well. The layer sequence in the supercapacitor three-layer structure was specified. The results of the measurments were summarized and conclusions were made. From these, high quality and perspective of the structure was determined.